Method of anisotropically etching monocrystalline, disk-shaped w

Details Method of anisotropically etching monocrystalline, disk-shaped w Method of anisotropically etching monocrystalline, disk-shaped w

1991-08-22

1994-02-01

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 1566591, 156657, 156653, H01L 2100

Patent

active

052829260

ABSTRACT:
A method for anisotropically etching recesses in a monocrystalline disk-shaped wafer is proposed, by which structural elements such as membranes or through openings can be made in the wafer. To this end, a mask layer is applied to a first surface of the wafer and subsequently structured by making at least one opening in the mask layer. The dimensioning of the at least one opening, and its orientation with respect to the crystal orientation of the wafer and to the anisotropic properties of the wafer material, are selected such that the desired size and shape of the area of the recess or outlet hole are attained by anisotropic etching into the wafer through the at least one opening in the mask layer and by purposeful underetching of the mask layer.

REFERENCES:
patent: 3728179 (1973-04-01), Davidson et al.
patent: 3752702 (1973-08-01), Iizuka
patent: 4549926 (1985-10-01), Corboy et al.
patent: 4578142 (1986-03-01), Corboy et al.
patent: 4581928 (1986-04-01), Johnson
patent: 4585513 (1986-04-01), Gale et al.
patent: 4658495 (1987-04-01), Flatley
patent: 4698132 (1987-10-01), Dennis
E. Bassous & E. F. Baran, "The Fabrication of High Precision Nozzles by the Anisotropic Etching of (100) Silicon", Journal of the Electrochemical Society, vol. 125, No. 8, pp. 1321-1327, Aug. 1978.

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