Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-09-30
2000-10-31
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419222, 20429812, 20429813, 20429825, 20429828, 20429827, 118728, 118729, 118730, 118723MP, 118723E, 438602, 438618, 438622, 438624, 438637, 438648, 438656, 438643, 438653, 438685, 427585, 427523, H01L 2348, H01L 2352, H01L 23532, C23C 1434, C23C 1644
Patent
active
061397008
ABSTRACT:
A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an interlayer insulating film formed on a semiconductor substrate. A conductive layer used as an ohmic contact layer is formed on the interlayer insulating film including the contact hole. An upper surface of the conductive layer is nitrided to form a protective layer. An ALD (atomic layer deposition)-metal barrier layer is formed on the protective layer. The resulting metal barrier layer has good step coverage and no impurities, and the protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 5288379 (1994-02-01), Namiki et al.
patent: 5338423 (1994-08-01), Hindman et al.
patent: 5780908 (1998-07-01), Sekiguchi et al.
patent: 5858184 (1999-01-01), Fu et al.
patent: 5873942 (1999-02-01), Park et al.
patent: 5911857 (1999-06-01), Kim
patent: 5973402 (1999-10-01), Shinriki et al.
patent: 5998870 (1999-12-01), Lee et al.
Mikko Ritala et al., "Atomic Layer Epitaxy Growth of TiN Thin Films," J. Electrochem. So., vol. 142, No. 8, Aug. 1995, pp. 2731-2737.
Steven D. Marcus et al., "Characterization of low pressure chemically vapor-deposited tungsten nitride films", Thin Solid Films, 236 (1993), pp. 330-333, (month unknown).
Kang Sang-Bom
Lee Sang-in
Diamond Alan
Samsung Electronics Co,. Ltd.
LandOfFree
Method of and apparatus for forming a metal interconnection in t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of and apparatus for forming a metal interconnection in t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and apparatus for forming a metal interconnection in t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2047208