Method of 193 NM photoresist stabilization by the use of ion...

Details Method of 193 NM photoresist stabilization by the use of ion... Method of 193 NM photoresist stabilization by the use of ion...

2005-03-15

2005-03-15

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S322000, C430S327000

Reexamination Certificate

active

06866986

ABSTRACT:
A method of forming a photoresist includes forming a photoresist and patterning/developing it according to conventional methods. The photoresist is then subjected to ion implantation. The ions may be selected from the group consisting of argon, boron, boron fluoride, arsenic, phosphorous and nitrogen. The ion implantation during processing of the photoresist provides a stabilized photoresist and helps reduce CD loss, loss of the photoresist and formation of pin holes and striations.

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