Method manifesting a wide process window and using hexafluoropro

Details Method manifesting a wide process window and using hexafluoropro Method manifesting a wide process window and using hexafluoropro

1997-11-05

2000-06-13

Gulakowski, Randy

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 216 68, 216 72, 216 79, H01L 21302

Patent

active

060749598

ABSTRACT:
A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.

REFERENCES:
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5366590 (1994-11-01), Kadomura
patent: 5477975 (1995-12-01), Rice et al.
patent: 5707883 (1998-01-01), Tabara

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