Method involving trimming a hard mask in the peripheral...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S585000, C257SE21206

Reexamination Certificate

active

07910443

ABSTRACT:
A method for fabricating a semiconductor device includes forming a conductive material layer for forming a gate over a substrate including a cell region and a peripheral region, forming hard mask patterns over the conductive material layer, forming a mask pattern over the resultant structure in the cell region, exposing the peripheral region, trimming the hard mask patterns in the peripheral region, removing the mask pattern, and etching the conductive material layer to form gate patterns using the hard mask patterns.

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patent: 2008/0166876 (2008-07-01), Jung
patent: 1632921 (2005-06-01), None
patent: 1722409 (2006-01-01), None
patent: 1879201 (2006-12-01), None
patent: 10-2005-0070320 (2005-07-01), None

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