Method including forming gate dielectrics having multiple...

Details Method including forming gate dielectrics having multiple... Method including forming gate dielectrics having multiple...

2007-04-17

2007-04-17

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S216000, C438S261000

Reexamination Certificate

active

10163686

ABSTRACT:
A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric may be formed as a nanolaminate of a lanthanide oxide and a lanthanide oxide selected from the group consisting of Nd2O3, Sm2O3, Gd2O3, and Dy2O3by electron beam evaporation. These gate dielectrics having a lanthanide oxide nanolaminate are thermodynamically stable such that the nanolaminate forming the gate dielectric will have minimal reactions with a silicon substrate or other structures during processing.

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