Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-31
2009-11-17
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S149000, C438S156000, C438S212000, C438S479000, C257S347000, C257SE21561, C257SE21562
Reexamination Certificate
active
07618865
ABSTRACT:
A method in the fabrication of a monolithically integrated vertical device on an SOI substrate comprises the steps of providing an SOI substrate including, from bottom to top, a silicon bulk material, an insulating layer, and an monocrystalline silicon layer; forming an opening in the substrate, which extends into the bulk-material, forming silicon oxide on exposed silicon surfaces in the opening and subsequently removing the formed oxide, whereby steps in the opening are formed; forming a region of epitaxial silicon in the opening; and forming a deep trench in an area around the opening, whereby the steps in the opening are removed.
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Johansson Ted
Norstroem Hans
Infineon - Technologies AG
Landau Matthew C
Maginot Moore & Beck
Snow Colleen E
LandOfFree
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