Method forming ohmic contact layer and metal wiring in...

Details Method forming ohmic contact layer and metal wiring in... Method forming ohmic contact layer and metal wiring in...

2011-01-11

2011-01-11

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S618000, C438S648000, C438S656000, C257SE21586

Reexamination Certificate

active

07867898

ABSTRACT:
A method of forming an ohmic contact layer including forming an insulation layer pattern on a substrate, the insulation pattern layer having an opening selectively exposing a silicon bearing layer, forming a metal layer on the exposed silicon bearing layer using an electrode-less plating process, and forming a metal silicide layer from the silicon bearing layer and the metal layer using a silicidation process. Also, a method of forming metal wiring in a semiconductor device using the foregoing method of forming an ohmic contact layer.

REFERENCES:
patent: 2002/0019127 (2002-02-01), Givens
patent: 2003/0124826 (2003-07-01), Kim
patent: 2003/0189026 (2003-10-01), Padhi et al.
patent: 2006/0251801 (2006-11-01), Weidman et al.
patent: 2007/0210448 (2007-09-01), Wong et al.
patent: 2007/0287237 (2007-12-01), Rockenberger et al.
patent: 2009/0004851 (2009-01-01), Shue et al.
patent: 06310608 (1994-11-01), None
patent: 09082805 (1997-03-01), None
patent: 2003332264 (2003-11-01), None
patent: 1999006145 (1999-01-01), None
patent: 1020040108222 (2004-12-01), None
patent: 1020050064787 (2005-06-01), None

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