Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-04-19
1994-06-07
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156644, 156646, 437185, 437228, 437904, 437905, H01L 2100
Patent
active
053186664
ABSTRACT:
A method of forming an n-p junction in a body (44, 44a, 44b) formed of Group II and Group VI elements. The body (44, 44a, 44b) initially is of p-type conductivity characteristic, and a dry reactive etching process is employed for forming a via (60, 60a, 60b) in the body by a chemical reaction which is also effective to type convert a portion of the body adjacent the via. An n-doped region (64, 64a, 64b) is thereby formed within the body around the via and between the via and the remaining, p-doped region of the body, thereby defining an n-p junction. In one embodiment, the body is mounted on an electrical device (50, 50a, 50b) having an input contact pad (58, 58a, 58b), and an electrically conductive layer (62, 46a, 90) is formed in connection with the contact pad and the n-doped region adjacent the via. In one application, a plurality of the n-p doped via junctions are formed in laterally spaced orientation for providing an array of infrared radiation sensitive photodiodes (24, 24a, 24b), the n-doped region of each diode having electrical connection with a respective contact pad of the electrical device.
REFERENCES:
patent: 4734152 (1988-03-01), Geis et al.
patent: 4838984 (1989-06-01), Luttmer et al.
patent: 5017511 (1991-05-01), Elkind et al.
patent: 5157000 (1992-10-01), Elkind et al.
Spencer et al, "Methyl Radical Etching of Compound Semiconductors with a Secondary Afterglow Reactor", J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 8, No. 3, pt. 1, pp. 1690-1695, May-Jun. 1990.
Foad et al, "Reactive Ion Etching of II-IV Semiconductors Using a Mixture of Methane and Hydrogen", Electron. Lett. (UK), vol. 27, No. 1, pp. 73-75, 3 Jan. 1991.
Elkind Jerome L.
Orloff Glennis J.
Smith Patricia B.
Dang Thi
Donaldson Richard L.
Kesterson James C.
Stoltz Richard A.
Texas Instruments Incorporated
LandOfFree
Method for via formation and type conversion in group II and gro does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for via formation and type conversion in group II and gro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for via formation and type conversion in group II and gro will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-790698