Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-03
2005-05-03
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S306000
Reexamination Certificate
active
06887763
ABSTRACT:
A method for forming a lightly doped drain (LDD) field effect transistor uses very thin first sidewall spacers over the gate sidewalls, in which annealing/oxidation of the sidewall spacers results in (a) the rounding of corner portions of the gate structure sidewalls adjacent the gate oxide, and (b) a very low thermal consumption comprising a small portion of the total thermal budget. Secondary sidewall spacers of greater width are then formed to act as offsets in the introduction of N-type dopants into the substrate to form source and drain contact regions. The method may be varied to accommodate various design configurations and size scaling.
REFERENCES:
patent: 5132757 (1992-07-01), Tignor et al.
patent: 5348900 (1994-09-01), Ayukawa et al.
patent: 5376566 (1994-12-01), Gonzalez
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5393683 (1995-02-01), Mathews et al.
patent: 5405791 (1995-04-01), Ahmad et al.
patent: 5460993 (1995-10-01), Hsu et al.
patent: 5637514 (1997-06-01), Jeng et al.
patent: 5641698 (1997-06-01), Lin
patent: 5719425 (1998-02-01), Akram et al.
patent: 5766969 (1998-06-01), Fulford et al.
patent: 5789298 (1998-08-01), Gardner et al.
patent: 5866460 (1999-02-01), Akram et al.
patent: 5920782 (1999-07-01), Shih et al.
patent: 5963814 (1999-10-01), Walker et al.
patent: 5966611 (1999-10-01), Jost et al.
patent: 5970358 (1999-10-01), Howard
patent: 5981345 (1999-11-01), Ryum et al.
patent: 5998274 (1999-12-01), Akram et al.
patent: 6083846 (2000-07-01), Fulford et al.
patent: 6124614 (2000-09-01), Ryum et al.
patent: 6127212 (2000-10-01), Chen et al.
patent: 6140186 (2000-10-01), Lin et al.
patent: 6187645 (2001-02-01), Lin et al.
patent: 6258680 (2001-07-01), Fulford et al.
patent: 6261913 (2001-07-01), Akram et al.
patent: 6350665 (2002-02-01), Jin et al.
patent: 6383881 (2002-05-01), Akram et al.
Akram Salman
Ditali Mohamed A.
Doan Theresa T.
Micro)n Technology, Inc.
TraskBritt
LandOfFree
Method for using thin spacers and oxidation in gate oxides does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for using thin spacers and oxidation in gate oxides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for using thin spacers and oxidation in gate oxides will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3401989