Method for using a modified post-etch clean rinsing agent

Details Method for using a modified post-etch clean rinsing agent Method for using a modified post-etch clean rinsing agent

2006-08-31

2010-06-08

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S627000, C438S684000, C438S789000, C438S790000, C216S027000, C216S037000, C216S067000, C134S002000, C134S006000, C134S001300

Reexamination Certificate

active

07732345

ABSTRACT:
The present invention provides a method for manufacturing an integrated circuit. In one embodiment, the method includes etching one or more openings within a substrate using an etch tool, and subjecting the one or more openings to a post-etch clean, wherein a delay time exists between removing the substrate from the etch tool and the subjecting the one or more opening to the post-etch clean. This method may further include exposing the substrate having been subjected to the post-etch clean to a rinsing agent, wherein a resistivity of the rinsing agent is selected based upon the delay time.

REFERENCES:
patent: 5855792 (1999-01-01), Adams et al.
patent: 6517637 (2003-02-01), Fu et al.
patent: 6613681 (2003-09-01), Hillyer et al.

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