Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-05-04
2000-03-28
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438677, 438686, 174255, 29830, 29846, H05K 336
Patent
active
060431504
ABSTRACT:
The present invention provides a novel method for forming uniform dendrites, on circuit features that does not result in large, elongated dendrites along the edges of the circuit features. The method comprises the following steps: providing a substrate having circuitry disposed thereon; applying a photoresist to the substrate at a thickness which is preferably about the height of the intended dendrite height; imaging the photoresist to expose all or a portion of the top surface of the circuitry; forming the dendrites; and removing the photoresist. The photoresist which is employed to control the dendrite height is applied so that the photoresist either: abuts the edge of the circuitry leaving the top surface of the circuitry exposed; or abuts the edge of the circuitry and extend over the top edge of the circuitry so that a portion of the top surface of the circuitry is exposed; or does not touch the circuitry nor an area surrounding the base of the circuitry. The method of the present invention provides uniform dendrites, that is, the dendrites along the edge of the circuitry are within about 50%, preferably about 40%, more preferably within about 25% of the average dendrite height; preferably the dendrites along the edge of the circuitry are within 10% of the highest non-edge dendrite. The invention also relates to electronic structures having uniform dendrites disposed thereon.
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Downes, Jr. Francis Joseph
Galasco Raymond Thomas
Molla Jaynal Abedin
International Business Machines - Corporation
Jr. Carl Whitehead
Lucas James A.
Potter Roy
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