Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Patent
1997-09-05
2000-10-03
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
438795, H01L 21477, H01L 2126
Patent
active
061272892
ABSTRACT:
A method of treating the surface of a semiconductor wafer is disclosed for making the wafer resistant to particle adhesion, the method involving the application of a uniform corona charge to the wafer surface. The corona charge is deposited on the wafer using commercially available tools, and if necessary, it may be later removed by immersing the wafer in deionized water or by depositing a compensating corona charge over the wafer of opposite polarity relative to the originally-applied charge.
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Inaba et al., "Neutralization of Wafer Charging in Nitrogen Gas", IEEE Transactions on Semiconductor Manufacturing, vol. 5, No. 4, pp. 359-367, Nov. 1992.
Guerrero Maria
Jr. Carl Whitehead
Lucent Technologies - Inc.
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