Method for toolmatching and troubleshooting a plasma...

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

Reexamination Certificate

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C315S111410, C333S017300, C118S050100

Reexamination Certificate

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06873114

ABSTRACT:
A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

REFERENCES:
patent: 5565737 (1996-10-01), Keane
patent: 5939886 (1999-08-01), Turner et al.
patent: 20030178140 (2003-09-01), Hanazaki et al.
SmartPIM with ImPrint—A Better, Faster Way to Fault Detection and Classification (FDC), 2001 Scientific Systems, 4 pages.

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