Method for thinning a semiconductor wafer

Details Method for thinning a semiconductor wafer Method for thinning a semiconductor wafer

1992-12-21

1993-12-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156631, 156633, 156645, 156657, 156662, H01L 21306, B44C 122

Patent

active

052680657

ABSTRACT:
A method for thinning a semiconductor wafer (11) is provided. An support film (15) is mounted to the semiconductor wafer (11). The support film (15) provides support for a semiconductor wafer during thinning as well as protection for a front-side (12) of the semiconductor wafer (11). After mounting the support film (15) to the semiconductor wafer (11), a back-side (13) of the semiconductor wafer is etched in a two step process. First the back-side (13) undergoes a mechanical grinding followed by a chemical etch. A metal film (18) may be sputtered on the back-side (13). The semiconductor wafer (11) having the support film (15) is placed in a tape frame (20) for dicing operations and the support film (15) is removed from the front-side (12) of the semiconductor wafer (11).

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patent: 4700467 (1987-10-01), Donzelli
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patent: 4983251 (1991-01-01), Haisma et al.
patent: 4994139 (1991-02-01), Biermann et al.
patent: 5127984 (1992-07-01), Hua et al.
"Mass Production Back-Grinding/Wafer-Thinning Technology for GaAs Devices", IEEE Transaction on Components, Hybrids, and Manufacturing Technology, vol. 13, No. 3, Sep. 1990.

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