Method for the production of semiconductor devices

Details Method for the production of semiconductor devices Method for the production of semiconductor devices

1986-03-24

1989-04-25

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156601, 156DIG70, 148175, 148DIG169, 148DIG17, 148DIG25, 29576E, 437225, H01L 2120

Patent

active

048245186

ABSTRACT:
A method for the production of semiconductor devices comprising: subjecting a GaAs substrate with an oxidized film thereon to a degasification treatment, heating the substrate during a radiation treatment by a molecular beam within a pre-treatment chamber to remove the oxidized film from the substrate, and growing a phosphorous compound semiconductor layer on the substrate by molecular beam epitaxy within a growth chamber connected to the pre-treatment chamber.

REFERENCES:
patent: 4314873 (1982-02-01), Wieder et al.
patent: 4330360 (1982-05-01), Kubiak et al.
patent: 4464342 (1984-08-01), Tsang
patent: 4493142 (1985-01-01), Hwang
Parker, "The Technology and Physics of Molecular Beam Epitaxy", (Plenum, 1985) pp. 43-44.
Tsang (1981) Applied Physics Letters 38: 587-589.
Miller et al., (1985) Journal of Applied Physics 57: 1922-1927.
H. Asahi et al., J. Appl. Phys. 53(7):4928-4931 (1982).
Search Report on Corresponding U.K. Patent Application No. 8607458, inventors Hayakawa, et al.
Takamori et al., (1904) Japanese Journal of Applied Physics. 23: L599-L601.
Kawamura et al., (1981) Japanese Journal of Applied Physics. 20: L807-L810.

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