Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S243000, C438S256000, C438S303000
Reexamination Certificate
active
07118955
ABSTRACT:
Method for the production of a semiconductor structure comprising a plurality of gate stacks on a semiconductor substrate which serve as control electrodes for a respective selection transistor of a corresponding memory cell comprising a storage capacitor. Gate stacks are provided next to one another on the substrate provided with a gate dielectric wherein the gate stacks have a lower first layer made of polysilicon, an overlying second layer made of metal silicide, and an upper layer made of silicon nitride. A sidewall oxide is formed on uncovered sidewalls of the first and second layers of the gate stacks, and at least partly the sidewall oxide is removed on those sidewalls of the gate stacks serving as a control electrode which are remote from the associated storage capacitor. Silicon nitride sidewall spacers are then formed on the gate stacks.
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Amon Jurgen
Faul Jurgen
Ruder Thomas
Schuster Thomas
Infineon - Technologies AG
Jenkins Wilson Taylor & Hunt, P.A.
Tsai H. Jey
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