Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2007-08-28
2007-08-28
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S058000, C216S067000, C438S706000, C438S710000, C438S733000, C438S737000
Reexamination Certificate
active
10522694
ABSTRACT:
A method for producing a micromechanical device, e.g., a micromechanical oscillating mirror device, is provided. It is provided, starting from the front side of an SOI/EOI(epipoly on insulator) substrate, to penetrate to the desired depth of the silicon substrate layer in two successive, separate deep etching steps, and to use this in its upper region that is close to the oxide layer as sacrificial layer for vertically exposing the island structures that are positioned above the oxide layer in the functional layer. The method according to the present invention of a sacrificial layer process for generating large vertical deflections utilizes purely surface micromechanical process steps.
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Fischer Frank
Metzger Lars
Ahmed Shamim
Kenyon & Kenyon LLP
Robert & Bosch GmbH
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