Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-08
2005-02-08
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S082000, C438S090000, C438S099000, C257S040000
Reexamination Certificate
active
06852583
ABSTRACT:
The invention relates to an economical and precise method for the production and configuration of an organic field-effect transistor (OFET) whereby the solubility of at least one functional polymer of an OFET is utilized to such a degree, that the functional polymer is deposited on the OFET, or a substrate, by means of a conventional printing process as for a color.
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Bernds Adolf
Clemens Wolfgang
Fix Walter
Rost Henning
Carella Byrne Bain Gilfillan Cecchi et al.
Lee, Jr. Granvill D.
Olstein Elliot
Siemens Aktiengesellschaft
Smith Matthew
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