Method for the manufacture of resist structures

Details Method for the manufacture of resist structures Method for the manufacture of resist structures

1981-09-25

1983-07-26

Louie, Jr., Won H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430 5, G03C 500

Patent

active

043954812

ABSTRACT:
The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.

REFERENCES:
patent: 4011351 (1977-03-01), Gipstein et al.
patent: 4268607 (1981-05-01), Tada
patent: 4273856 (1981-06-01), Yoneda et al.

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