Method for the manufacture of a non-volatile memory device...

Details Method for the manufacture of a non-volatile memory device... Method for the manufacture of a non-volatile memory device...

2004-08-30

2009-08-25

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C257SE21690

Reexamination Certificate

active

07579239

ABSTRACT:
The present invention relates to a method for processing of a non-volatile memory cell (50) which comprises a double gate stack and a single access gate. The method combines a way of processing an access gate with drain implant, separate from source implant, in a self-aligned manner. The method of the present invention does not require mask alignment sensitivity and makes it possible to implant self-aligned an extended drain for erasing of the memory device. Furthermore, the method provides a way of performing separately drain and source implant with different doping without the use of an additional mask.

REFERENCES:
patent: 6091104 (2000-07-01), Chen
patent: 6133098 (2000-10-01), Ogura et al.
patent: 2002/0137290 (2002-09-01), Wils et al.
patent: WO 00/51188 (2000-08-01), None
patent: WO 03/015151 (2003-02-01), None
patent: WO 03/015172 (2003-02-01), None

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