Method for the improved microwave deposition of thin films

Details Method for the improved microwave deposition of thin films Method for the improved microwave deposition of thin films

1993-07-09

1994-06-28

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427250, 4272553, 427575, 427576, 427579, 427598, B05D 306

Patent

active

053245539

ABSTRACT:
An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.

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