Method for the heat treatment of II-VI semiconductors

Details Method for the heat treatment of II-VI semiconductors Method for the heat treatment of II-VI semiconductors

1998-01-23

1999-08-03

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438909, 438971, H01L 2100

Patent

active

059337516

ABSTRACT:
An object of the invention is to provide a method for the heat treatment of II-VI semiconductors such as ZnS, ZnS.sub.x Se.sub.1-x, Zn.sub.y Cd.sub.1-y Se, etc. to dope with Group III elements as a donor impurity to reduce its resistivity. This object can be attained by a method for the heat treatment of II-VI semiconductors in a closed vessel, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of single crystal of II-VI semiconductors, then charging the single crystal and a Group II element for constituting the single crystal in the closed vessel and heating them in such a manner that the both are not contacted with each other.

REFERENCES:
patent: 3870473 (1975-03-01), Kyle
patent: 4960721 (1990-10-01), Terashima et al.
patent: 5055363 (1991-10-01), Tomomura et al.
patent: 5554877 (1996-09-01), Kitagawa et al.

Affiliated with

Also associated with

Rating

Method for the heat treatment of II-VI semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the heat treatment of II-VI semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the heat treatment of II-VI semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-859748