Method for the fabrication of a semiconductor device...

Details Method for the fabrication of a semiconductor device... Method for the fabrication of a semiconductor device...

2005-03-15

2005-03-15

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

06867095

ABSTRACT:
A method for fabricating a semiconductor device comprising: providing a semiconductor substrate on which a transistor made of a gate electrode, a source/drain is formed; forming a first insulating layer on the semiconductor substrate, with bit-line contact holes and a storage node contact hole being formed in the insulating layer to expose the source and drain; forming bit-line contact plugs and storage node in the bit-line contact holes and the storage node contact hole; removing the first insulating layer; forming a second insulating layer on the resultant structure; forming a first conductive layer on the second insulating layer; forming a third insulating layer; forming bit-line contact holes by selective removal of the first conductive layer and the third insulating layer opposing the upper surface of the bit-line contact plug; and forming a second conductive layer in the bit-line contact holes.

REFERENCES:
patent: 5648291 (1997-07-01), Sung
patent: 5675176 (1997-10-01), Ushiku et al.
patent: 6235575 (2001-05-01), Kasai et al.
patent: 6242772 (2001-06-01), Wahlstrom
patent: 6391736 (2002-05-01), Uh et al.
patent: 6642097 (2003-11-01), Tu

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