Method for the fabrication of a semiconductor device

Details Method for the fabrication of a semiconductor device Method for the fabrication of a semiconductor device

1997-05-08

1998-06-23

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, H01L 21336

Patent

active

057705054

ABSTRACT:
There are disclosed methods for the fabrication of semiconductor device. A junction leakage or defect which is generated at the bird's beak of field oxide film when forming an oxide film spacer at the side wall of a gate electrode in a MOSFET can be prevented by implanting a low density dopant or by sequentially implanting a high density dopant and a low density dopant into the substrate, subsequent to formation of the oxide film spacer.

REFERENCES:
patent: 5217913 (1993-06-01), Watabe et al.
patent: 5401678 (1995-03-01), Jeong et al.
patent: 5468670 (1995-11-01), Ryou
patent: 5523250 (1996-06-01), Jeong et al.
Wolf, "Silicon Processing for the VLSI Era, vol. 2: Process Integration", pp. 354-356, Lattice Press, 1990.

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