Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1999-07-30
2000-10-03
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041921, 20419212, 20419215, 20419216, 20419226, 20419228, 20429802, 20429806, 20429807, 20429812, 20429823, 20429825, 20429826, 20429828, 118723E, 118723R, 118723ER, 118729, 118730, 118 75, 427569, 427585, 427590, C23C 1644, C23C 1734
Patent
active
061267929
ABSTRACT:
For the application of a scratch protection layer on plastic substrates, a plasma is produced by the plasma CVD method, away from the individual plastic substrate, in an excitation gas, and this excitation gas is supplied through a tube to the plastic substrate. Subsequently, an antireflection layer is applied by means of a gas flow sputter source. The apparatus provided for this has a plasma CVD chamber (1) and a gas flow sputter chamber (2), next to one another. The plastic substrates (7,8) to be coated are transported from the plasma CVD chamber (2) to the gas flow sputter chamber (1) with the aid of a transporting device (3), designed as a turning plate.
REFERENCES:
patent: 4234622 (1980-11-01), DuBuske et al.
patent: 5330633 (1994-07-01), Matsumoto et al.
patent: 5466296 (1995-11-01), Misiano et al.
IBM Technical Disclosure Bulletin, "Thin Films Deposition System," vol. 38, No. 2, pp. 187-188.
JP 62-174382, Patent Abstracts of Japan, C-470, Jan. 22, 1988, vol. 12, No. 22.
Grunwald Heinrich
Liehr Michael
Diamond Alan
Leybold Systems GmbH
LandOfFree
Method for the application of a scratch protection layer and an does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the application of a scratch protection layer and an , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the application of a scratch protection layer and an will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-191217