Method for testing semiconductor devices

Details Method for testing semiconductor devices Method for testing semiconductor devices

2007-08-31

2008-11-18

Nguyen, Ha Tran T (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S1540PB

Reexamination Certificate

active

07453280

ABSTRACT:
A method for testing a batch of semiconductor devices in wafer level is provided. The method includes the following steps: (a) obtaining a breakdown voltage of gate dielectric of each semiconductor device; (b) applying, to the gate dielectric of each semiconductor device, a stress voltage below the breakdown voltage but above a base voltage of gate dielectric of the semiconductor devices; (c) after the step (b), measuring currents of gate dielectric of each semiconductor devices at the base voltage; and (d) obtaining a tailing distribution from the measured currents.

REFERENCES:
patent: 6521469 (2003-02-01), La Rosa et al.
patent: 6734028 (2004-05-01), Yang et al.
patent: 6781401 (2004-08-01), Kim
patent: 6815970 (2004-11-01), Rost et al.
patent: 6967499 (2005-11-01), Haase et al.

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