Method for stripping photoresist from etched wafer

Details Method for stripping photoresist from etched wafer Method for stripping photoresist from etched wafer

2008-07-08

2008-07-08

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S714000, C438S689000, C438S709000

Reexamination Certificate

active

07396769

ABSTRACT:
A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping gas comprising CO2is provided. A plasma is formed from the stripping gas comprising CO2. The plasma from the stripping gas comprising CO2is used to strip the patterned photoresist mask.

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