Method for stabilizing a silicon structure after ion implantatio

Details Method for stabilizing a silicon structure after ion implantatio Method for stabilizing a silicon structure after ion implantatio

1996-11-07

1999-10-12

Trinh, Michael

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438 14, H01L 21425, H01L 2166

Patent

active

059666269

ABSTRACT:
The present invention provides a method for stabilizing the crystal structure of a silicon substrate after an ion implantation process including the step of exposing the substrate to a temperature not higher than 200.degree. C. for a time period of not less than 10 seconds, and preferably to a temperature between about 100.degree. C. and about 200.degree. C. for a time period of between about 10 seconds and about 10,000 seconds.

REFERENCES:
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4682407 (1987-07-01), Wilson
patent: 4701422 (1987-10-01), Elliott
patent: 5185273 (1993-02-01), Jasper
patent: 5361015 (1994-11-01), Okumuki et al.
patent: 5550082 (1996-08-01), Wolfe et al.
patent: 5643404 (1997-07-01), Muraoka et al.

Affiliated with

Also associated with

Rating

Method for stabilizing a silicon structure after ion implantatio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for stabilizing a silicon structure after ion implantatio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for stabilizing a silicon structure after ion implantatio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661933