Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-10-19
2000-11-21
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438256, H01L 21336
Patent
active
061502189
ABSTRACT:
A method for simultaneously forming a bit-line contact and a node contact first forms a polysilicon layer and a first insulator on a substrate, and then patterns patterning the polysilicon layer and the first insulator, wherein the substrate consists of an active area and an isolation area. Next, a second insulator is formed on the exposed substrate and the first insulator. Then, by forming a photoresist layer on the second insulator and patterning the photoresist layer, a pattern containing a bit-line contact pattern and a node contact pattern is transferred onto the second insulator. By performing an etching back process on the second insulator, the bit-line contact and the node contact are formed simultaneously in a self-aligned way.
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Lee Hal
Liang Chia-Wen
Chaudhari Chandra
Chen Jack
United Microelectronics Corp.
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