Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-04-14
2000-10-03
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438207, 438217, 438234, 257370, 257378, H01L 218238
Patent
active
061272132
ABSTRACT:
An improved method for simultaneously forming low voltage and high voltage devices is disclosed. The method includes using gradient doping to generate the gradient concentration in a semiconductor such that can tolerate higher threshold voltage. The device can get higher driving current by using gradient doping only in drain regions in metal-oxide-semiconductor field effect transistor (MOSFET). In addition, the invention can simultaneously generate higher current gain bipolar junction transistor (BJT) for applied integrated circuit. Further more, the invention can meet small layout rule of low voltage device and the only drain region to be operated in a high voltage device.
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Monin, Jr. Donald L.
Pham Hoai
United Microelectronics Corp.
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