Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-09-14
2010-11-23
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S486000, C438S488000, C438S564000, C438S764000
Reexamination Certificate
active
07838437
ABSTRACT:
The invention relates to a method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. In this method, in a first step a substrate base layer1is produced, in a step subsequent thereto, on the latter an intermediate layer system2which has at least one doped partial layer is deposited, in a step subsequent thereto, an absorber layer3which is undoped or likewise doped is deposited on the intermediate layer system2, and in a recrystallization step, the absorber layer3is heated, melted, cooled and tempered. In an advantageous method modification, instead of an undoped capping layer, a capping layer system4which has at least one partial layer can also be applied on the absorber layer3.
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Brinks Hofer Gilson & Lione
Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung
Le Dung A.
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