Method for silicide formation on semiconductor devices

Details Method for silicide formation on semiconductor devices Method for silicide formation on semiconductor devices

2006-01-30

2008-11-04

Everhart, Caridad M (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21164, C257SE21165

Reexamination Certificate

active

07446042

ABSTRACT:
A method for forming nickel silicide includes degassing a semiconductor substrate that includes a silicon surface. After the degassing operation, the substrate is cooled prior to a metal deposition process, during a metal deposition process, or both. The cooling suppresses the temperature of the substrate to a temperature less than the temperature required for the formation of nickel silicide. Nickel diffusion is minimized during the deposition process. After deposition, an annealing process is used to urge the formation of a uniform silicide film. In various embodiments, the metal film may include a binary phase alloy containing nickel and a further element.

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patent: 2002/0102849 (2002-08-01), Yi et al.
patent: 2006/0011996 (2006-01-01), Wu et al.
patent: 2007/0059878 (2007-03-01), Chang et al.

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