Method for separating sapphire wafer into chips using...

Details Method for separating sapphire wafer into chips using... Method for separating sapphire wafer into chips using...

2006-12-19

2006-12-19

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S110000, C438S113000, C438S114000, C257SE21599

Reexamination Certificate

active

07151045

ABSTRACT:
A method for singulating a sapphire wafer, provided with semiconductor elements formed thereon, into unit chips includes (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) dry-etching the rear surface of the lapped sapphire wafer so that the sapphire wafer has a uniform thickness; and (d) scribing the rear surface of the dry-etched sapphire wafer.

REFERENCES:
patent: 6221751 (2001-04-01), Chen et al.
patent: 6465158 (2002-10-01), Sekiya
patent: 6583032 (2003-06-01), Ishikawa et al.
patent: 6593170 (2003-07-01), Tateiwa et al.
patent: 6916725 (2005-07-01), Yamaguchi
patent: 2001-81952 (2001-08-01), None
patent: 2002-33592 (2002-05-01), None
Wolf and Tauber; “Silicon Processing for the VLSI Era vol. 1: Process Technology” p. 541; 1986; Lattice Press; Sunset Beach, CA.

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