Method for sensing complete removal of oxide layer from substrat

Details Method for sensing complete removal of oxide layer from substrat Method for sensing complete removal of oxide layer from substrat

1996-06-28

1998-05-05

Evans, F. L.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

25055928, G01B 1106

Patent

active

057483191

ABSTRACT:
A method for sensing the completion of removal of an oxide layer from a semiconductor substrate or a super conductor by a thermal etching in real time. In the method, the time of removal of the oxide layer on the semiconductor substrate or the super conductor can ben accurately sensed. According to the method, when an oxide layer which is different from the semiconductor substrate in the refractive index is being thermally etched at a high temperature, the reflected signals of the laser beams forms a periodicity, and this periodicity is utilized so as to determine the etching rate and the time of the completion of the etching.

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