Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-12-23
1999-07-13
Wortman, Donna C.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C03C 1500, B44C 122
Patent
active
059226242
ABSTRACT:
Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO.sub.2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually in admixture with water.
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Iler et al., "The Colloid Chemistry of Silica and Silicates," Cornell University Press, Ithaca, NY (1955), Contents and pp. 252-255.
Robbins et al., "Chemical Etching of Silicon," J. Electrochem. Soc. 107:108-111 (1960).
Winters et al., "Gaseous Products from the Reaction of XeF.sub.2 with Silicon," J. Appl. Phys. 54:1218-1223 (1983).
Wong, M., et al. (1991) Characterization of wafer cleaning and oxide etching using vapor-phase hydrogen fluoride. Journal of the Electorchemical Society 138(6):1799-1802.
Kern, W., et al. (1970) Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology. RCA Review 187-206.
de Blank Rene
Hendriks Menso
Heyns Mark
Verhaverbeke Steven
Brumback Brenda G.
IMEC vzw
Wortman Donna C.
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