Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1998-05-18
2000-01-18
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438404, 438424, H01L 2176
Patent
active
060157453
ABSTRACT:
An SOI semiconductor design methodology enables the implementation of simplified STI processes by the design and formation of a shallow trench isolation frame around an electrically active semiconductor region. The simplified STI processes include the fabrication of a trench by phase edge etching, trench sidewall oxidation, TEOS fill, and, finally a chemical or mechanical polish. The attribute which enables the simple process is that all isolation images can be current minimum or near minimum size, specifically no wider than twice the over-lay tolerance of the technology.
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Adkisson James W.
Lasky Jerome B.
Pastel Paul W.
Rankin Jed H.
Dang Trung
International Business Machines - Corporation
Sabo, Esq. William D.
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