Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S738000, C438S757000, C438S786000, C438S791000
Reexamination Certificate
active
10851377
ABSTRACT:
A strained channel MOSFET device with improved charge carrier mobility and method for forming the same, the method including providing a first and second FET device having a respective first polarity and second polarity opposite the first polarity on a substrate; forming a strained layer having a stress selected from the group consisting of compressive and tensile on the first and second FET devices; and, removing a thickness portion of the strained layer over one of the first and second FET devices to improve charge carrier mobility.
REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2004/0029323 (2004-02-01), Shimizu et al.
patent: 2005/0214998 (2005-09-01), Chen et al.
Chang Sun-Jay
Cheng Kaun-Lun
Cheng Shui-Ming
Fung Ka-Hing
Yao Yu-Yuan
Smith Zandra V.
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Toniae M.
Tung & Associates
LandOfFree
Method for selectively forming strained etch stop layers to... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for selectively forming strained etch stop layers to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selectively forming strained etch stop layers to... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3731386