Method for selectively etching an aluminum containing layer

Details Method for selectively etching an aluminum containing layer Method for selectively etching an aluminum containing layer

2007-04-24

2007-04-24

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S720000

Reexamination Certificate

active

10897880

ABSTRACT:
A method of forming conductive connections for semiconductor devices is provided. An organic low-k dielectric layer is formed over a wafer. A conductive aluminum containing layer is formed over the organic low-k dielectric layer. The wafer is placed in an etch chamber. An etch gas comprising HBr is provided into the etch chamber. A plasma is formed from the etch gas comprising HBr. The plasma from the etch gas comprising HBr is used to selectively etch the conductive aluminum containing layer with respect to the low-k dielectric layer.

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