Method for selective formation of trench

Details Method for selective formation of trench Method for selective formation of trench

2009-10-08

2011-11-29

Stark, Jarrett (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S232000

Reexamination Certificate

active

08067282

ABSTRACT:
A method for selective formation of trenches is disclosed. First, a substrate is provided. The substrate includes a first semiconductor element and a second semiconductor element. The first semiconductor element has a dopant. Second, a wet etching procedure is carried out to selectively form a pair of trenches in the substrate around the second semiconductor element, a first source/drain ion implantation is selectively carried out on the first semiconductor element, or a second source/drain ion implantation is selectively carried out on the second semiconductor element.

REFERENCES:
patent: 6165826 (2000-12-01), Chau et al.
patent: 7402496 (2008-07-01), Liu et al.
patent: 7442967 (2008-10-01), Ko et al.
patent: 7816686 (2010-10-01), Pan et al.
patent: 2005/0035470 (2005-02-01), Ko et al.
patent: 2006/0189056 (2006-08-01), Ko et al.
patent: 2007/0045729 (2007-03-01), Hoentschel et al.
patent: 2008/0090349 (2008-04-01), Hoentschel et al.
patent: 2009/0174002 (2009-07-01), Ouyang et al.

Affiliated with

Also associated with

Rating

Method for selective formation of trench does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for selective formation of trench, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selective formation of trench will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4281635