Method for selective etching of titaniumdioxide relative to alum

Details Method for selective etching of titaniumdioxide relative to alum Method for selective etching of titaniumdioxide relative to alum

1981-03-06

1982-03-30

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156665, 156667, 204 29, 204 38A, 252 795, H01L 21283, H01L 21308

Patent

active

043222641

ABSTRACT:
A method of selectively etching a titanium oxide layer with a view to the formation of a mask for the localization of the anodic oxidation of an underlying metallic layer.
The method is characterized in that the material comprising the said titanium oxide layer is dipped in a solution of hydrogen peroxide and ammonia.
Application to the formation of contacts on semiconductor devices.

REFERENCES:
patent: 3562013 (1971-02-01), Mickelson et al.
patent: 3630796 (1971-12-01), Yokozawa et al.
patent: 3761313 (1973-09-01), Entwisle et al.
patent: 3841905 (1974-10-01), Dixon
Hackh's Chemical Dictionary, 4th Ed. McGraw-Hill Book Co., New York, N.Y. p. 26.
Weast, Ed. Handbook of Chemistry and Physics, The Cleveland Rubber Co., Cleveland, Ohio 1967 pp. B149.

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