Jean-Pierre Rioult

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III-V semiconductor device with OHMIC contact to high resistivit

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Method for selective etching of titaniumdioxide relative to alum

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
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Preferential etchant for aluminium oxide

Compositions – Etching or brightening compositions
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Profile ID: LFUS-PAI-P-226453

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