Method for selective deposition and devices

Details Method for selective deposition and devices Method for selective deposition and devices

2011-08-16

2011-08-16

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S680000, C438S762000, C438S763000, C438S758000, C438S778000, C257SE21170, C257SE21171, C257SE21269, C257SE21487

Reexamination Certificate

active

07998878

ABSTRACT:
A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

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