Method for roughening a silicon or polysilicon surface for a sem

Details Method for roughening a silicon or polysilicon surface for a sem Method for roughening a silicon or polysilicon surface for a sem

1991-07-03

1993-06-29

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156662, 437228, 437200, H01L 2100

Patent

active

052230813

ABSTRACT:
This invention relates to a method for roughening a silicon or polysilicon substrate of a semiconductor. The method includes the steps of: depositing a metal layer onto the substrate, heating the metal layer and substrate through to form a metal silicide on the substrate by reaction of the metal layer and substrate, and removing the metal silicide and a metal oxide by selective etching to expose the roughened surface. The actual etching process may be a two-step procedure. A first etch uses ammonium hydroxide and hydrogen peroxide to remove the oxide layer formed with the silicide. A second etch uses hydrofluoric acid to remove the silicide.

REFERENCES:
patent: 3615948 (1971-10-01), Krostewitz
patent: 4147564 (1979-04-01), Magee et al.
patent: 4294651 (1981-10-01), Ohmura
patent: 4663188 (1987-05-01), Kane
patent: 4917752 (1990-04-01), Jensen et al.

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