Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-03-29
2005-03-29
Des, Duy-Vu (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S696000, C438S704000, C438S717000, C438S725000, C438S736000
Reexamination Certificate
active
06872663
ABSTRACT:
A method of processing a semiconductor device is disclosed and comprises patterning a multi-layer photoresist which comprises an imaging layer overlying an underlying layer. The patterning of the resist defines an exposed portion of an underlying process layer. The method further comprises inspecting the patterned multi-layer photoresist for defects and re-working the patterned multi-layer photoresist upon a failed inspection. The re-work process comprises depositing a protection layer over the patterned multi-layer photoresist and over the exposed portion of the underlying process layer. A portion of the protection layer and the imaging layer are then removed in a concurrent manner while leaving a remaining portion of the protection layer covering the exposed portion of the underlying process layer. A remaining portion of the protection layer and the underlying layer are then removed in a concurrent manner and such removal does not adversely impact the process layer.
REFERENCES:
patent: 4557797 (1985-12-01), Fuller et al.
patent: 4770739 (1988-09-01), Orvek et al.
patent: 5286607 (1994-02-01), Brown
patent: 6110624 (2000-08-01), Hibbs et al.
patent: 6127089 (2000-10-01), Subramanian et al.
patent: 6210846 (2001-04-01), Rangarajan et al.
patent: 6358676 (2002-03-01), Wu
patent: 6514860 (2003-02-01), Okada et al.
patent: 6627387 (2003-09-01), Hsieh et al.
patent: 6767833 (2004-07-01), Shih et al.
patent: 6812131 (2004-11-01), Kennedy et al.
patent: 20020036183 (2002-03-01), Shibata
“Deep Ultraviolet Photoresists”, Science and Technology at Almaden, Jul. 23, 2002, 3 pages, taken from the Internat at: http://www.almaden.ibm.com/st/projects/litho/.
Advanced Micro Devices , Inc.
Des Duy-Vu
Tran Binh X.
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