Method for resizing pattern to be written by lithography...

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle

Reexamination Certificate

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C716S055000

Reexamination Certificate

active

08065635

ABSTRACT:
A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.

REFERENCES:
patent: 6335981 (2002-01-01), Harazaki
patent: 7279259 (2007-10-01), Ito et al.
patent: 2002/0051916 (2002-05-01), Ki
patent: 2003/0093767 (2003-05-01), Murai et al.
patent: 2004/0229472 (2004-11-01), Kobayashi
patent: 2006/0051684 (2006-03-01), Jang et al.
patent: 2007/0192757 (2007-08-01), Emi et al.
patent: 2008/0182185 (2008-07-01), Abe et al.
patent: 2010/0055587 (2010-03-01), Fujimura et al.
patent: 2003-43661 (2003-02-01), None
patent: 2004-279950 (2004-10-01), None
U.S. Appl. No. 12/369,252, filed Feb. 11, 2009, Yashima et al.

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