Method for resist strip in presence of regular low k and/or...

Details Method for resist strip in presence of regular low k and/or... Method for resist strip in presence of regular low k and/or...

2007-10-30

2007-10-30

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21259, C257SE21264, C430S256000

Reexamination Certificate

active

11126648

ABSTRACT:
A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.

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