Method for removing resist from semiconductor device

Details Method for removing resist from semiconductor device Method for removing resist from semiconductor device

1987-05-19

1988-12-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156655, 437225, B44C 122, C03C 1500, C03C 2506

Patent

active

047894270

ABSTRACT:
A method for removing a resist on a layer formed on a semiconductor substrate includes the steps of removing a portion of the resist by plasma processing and removing the remaining resist by a chemical process.
This method prevents the entry of heavy metal particles contained in the resist into the semiconductor substrate, so that a functional region formed in the semiconductor substrate is not contaminated by the heavy metal particles. As a result, destruction of the functional elements formed in the functional region is prevented, and thus the minority carrier generation lifetime in the device is not reduced.

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patent: 3881242 (1975-05-01), Nuttall et al.
patent: 3920483 (1975-11-01), Johnson, Jr. et al.
patent: 4028155 (1977-06-01), Jacob
patent: 4279671 (1981-07-01), Komatsu
patent: 4477310 (1984-10-01), Park et al.
IBM Technical Disclosure Bulletin, vol. 22, No. 4, Sep. 1979, p. 1457, N.Y., U.S.; R. Bartholomew et al.: "Photoresist stripping with in situ silicon oxide cleanup", (last paragraph).
IBM Journal of Research and Development, vol. 26, No. 5, Sep. 1982, pp. 580-589, Armonk, N.Y., U.S.; A. Bergendahl et al.: "Optimization of plasma processing for silicon-gate FET manufacturing applications."
Solid-State Electronics, vol. 25, No. 9, Sep. 1982, pp. 859-863, Exeter, GB; U. Niggebrugge et al.: "Effect of reactive sputter etching of SiO.sub.2 on the properties of subsequently formed MOS systems" (abstract, [p. 86]; conclusion).
European Search Report, Place: Berlin, Date of Completion: 0-09-1987; Examiner: Pretzel B. C.

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