Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-12-18
2007-12-18
Tran, Binh X. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S586000, C438S710000, C438S591000, C438S722000, C438S738000, C216S012000, C216S041000
Reexamination Certificate
active
11146538
ABSTRACT:
Disclosed are a method for removing a photoresist layer and a method for forming a metal line using the same. The method for removing a photoresist pattern, including the steps of: forming a bottom layer on a substrate by using the photoresist pattern as a mask; and removing the photoresist pattern with use of a high density plasma (HDP) apparatus. The method for forming a metal line, including the steps of: preparing a semi-finished substrate including an inter-layer insulation layer; forming a photoresist pattern on the inter-layer insulation layer; forming an opening by etching the inter-layer insulation layer with use of the photoresist pattern as an etch mask; removing the photoresist pattern by using a high density plasma (HDP) apparatus; and forming the metal line by filling the opening with a predetermined material.
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Angadi Maki
Blakely & Sokoloff, Taylor & Zafman
Magna-Chip Semiconductor, Ltd.
Tran Binh X.
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