Method for removing photoresist by hydrogen plasma

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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151 1, 156626, 156627, 156643, 156345, 156646, 1566591, 3151112, 427 40, 427 41, 430494, G03C 500, C23F 102

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042015790

ABSTRACT:
A method for removing photoresist from a substrate. A substrate to be stripped of photoresist is placed in a metal substrate holder or boat which is subsequently loaded into a plasma reactor. The holder is placed in contact with one electrode of the plasma reactor. The plasma reactor is evacuated and a hydrogen bearing gas is injected into the reactor at a rate to maintain the pressure between 0.1 and 10 Torr. The photoresist coated substrate is heated to a temperature between 100.degree. C. and 225.degree. C. Power is applied to the plasma reactor to create a hydrogen plasma which reacts with and removes the photoresist. During the removal operation the reflected power from the reactor is monitored to detect the end point of the plasma-photoresist reaction.

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patent: 3890176 (1975-06-01), Bolon
patent: 4115184 (1978-09-01), Poulsen
patent: 4134817 (1978-01-01), Bourdon
patent: 4142107 (1979-02-01), Hatzakis et al.

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